1 C2M0080120D silicon carbide power mosfet z -fe t tm mosfet n-channel enhancement mode features ? high speed switching with low capacitances ? high blocking voltage with low r ds(on) ? easy to parallel and simple to drive ? avalanche ruggedness ? resistant to latch-up ? halogen free, rohs compliant benefts ? higher system effciency ? reduced cooling requirements ? increased system switching frequency applications ? solar inverters ? high voltage dc/dc converters ? motor drives ? switch mode power supplies ? ups package to-247-3 part number package C2M0080120D to-247-3 v ds 1200 v i d @ 25?c 31.6 a r ds(on) 80 m ? maximum ratings (t c = 25 ?c unless otherwise specifed) symbol parameter value unit test conditions note i ds (dc) continuous drain current 31.6 a v gs @20 v, t c = 25?c fig. 16 20 v gs @20 v, t c = 100?c i ds (pulse) pulsed drain current 80 a pulse width t p = 50 s duty limited by t jmax, t c = 25?c v gs gate source voltage -10/+25 v p tot power dissipation 208 w t c =25?c fig. 15 t j , t stg operating junction and storage temperature -55 to +150 ?c t l solder temperature 260 ?c 1.6mm (0.063) from case for 10s m d mounting torque 1 8.8 nm lbf-in m3 or 6-32 screw C2M0080120D rev. a
2 electrical characteristics (t c = 25?c unless otherwise specifed) symbol parameter min. typ. max. unit test conditions note v (br)dss drain-source breakdown voltage 1200 v v gs = 0 v, i d = 100 a v gs(th) gate threshold voltage 1.7 2.2 v v ds = 10v, i d = 1 ma fig. 8 3.2 v ds = 10v, i d = 10 ma 1.2 1.7 v v ds = 10v, i d = 1 ma, t j = 150oc tbd v ds = 10v, i d = 10 ma, t j = 150oc i dss zero gate voltage drain current 1 100 a v ds = 1200 v, v gs = 0 v 10 250 v ds = 1200 v, v gs = 0 v t j = 150oc i gss gate-source leakage current 0.25 a v gs = 20 v, v ds = 0 v r ds(on) drain-source on-state resistance 80 98 m ? v gs = 20 v, i d = 20 a fig. 6 150 208 v gs = 20 v, i d = 20a, t j = 150oc g fs transconductance 9.8 s v ds = 20 v, i ds = 20 a fig. 4 8.5 v ds = 20 v, i ds = 20 a, t j = 150oc c iss input capacitance 950 pf v gs = 0 v v ds = 1000 v f = 1 mhz v ac = 25 mv fig. 13, 14 c oss output capacitance 80 c rss reverse transfer capacitance 6.5 e oss c oss stored energy 40 j fig. 12 t d(on)v turn-on delay time 12.0 ns v dd = 800 v, v gs = 0/20 v i d = 20 a r g(ext) = 0 , r l = 40 timing relative to v ds fig. 20 t fv fall time 18.4 t d(off)v turn-off delay time 23.2 t rv rise time 13.6 r g internal gate resistance 4.6 f = 1 mhz , v ac = 25 mv built-in sic body diode characteristics symbol parameter typ. max. unit test conditions note v sd diode forward voltage 3.3 v v gs = -5 v, i f = 10 a, t j = 25 oc 3.1 v gs = -2 v, i f = 10 a, t j = 25 oc t rr reverse recovery time 40 ns v gs = -5 v, i f = 20 a, t j = 25 oc v r = 800 v, d i f /d t= 350 a/s q rr reverse recovery charge 165 nc i rrm peak reverse recovery current 6.4 a thermal characteristics symbol parameter typ. max. unit test conditions note r jc thermal resistance from junction to case 0.60 0.65 k/w fig. 17 r cs case to sink, w/ thermal compound tbd r ja thermal resistance from junction to ambient 40 gate charge characteristics symbol parameter typ. max. unit test conditions note q gs gate to source charge 10.8 nc v ds = 800 v, v gs = 0/20 v i d =20 a per jedec24 pg 27 fig. 28 q gd gate to drain charge 18.0 q g gate charge total 49.2 C2M0080120D rev. a
3 0 10 20 30 40 0 2 4 6 8 10 12 14 drain - source current, i ds (a) gate - source voltage, v gs (v) 25 c 150 c parameters: v ds = 20 v 0 20 40 60 80 0 3 6 9 12 15 18 drain - source current, i ds (a) drain - source voltage v ds (v) conditions: t j = 150 c t p = 50 s v gs = 20 v v gs = 18 v v gs = 10 v v gs = 12 v v gs = 14 v v gs = 16 v 0 20 40 60 80 100 0 3 6 9 12 15 18 drain - source current, i ds (a) drain - source voltage v ds (v) conditions: t j = - 55 c t p = 50 s v gs = 20 v v gs = 18 v v gs = 10 v v gs = 12 v v gs = 14 v v gs = 16 v 0 20 40 60 80 100 0 3 6 9 12 15 18 drain - source current, i ds (a) drain - source voltage v ds (v) conditions: t j = 25 c t p = 50 s v gs = 20 v v gs = 18 v v gs = 10 v v gs = 12 v v gs = 14 v v gs = 16 v figure 2. typical output characteristics t j = 25 oc typical performance figure 4. typical transfer characteristics figure 6. on-resistance vs. drain current figure 1. typical output characteristics t j = -55 oc figure 3. typical output characteristics t j = 150 oc 0.5 0.8 1.0 1.3 1.5 1.8 2.0 2.3 - 50 - 25 0 25 50 75 100 125 150 on resistance, r ds on (pu) junction temperature, t j ( c) parameters: v gs = 20 v i ds = 20 a 0.04 0.08 0.12 0.16 0.20 0 10 20 30 40 on resistance, r ds on ( ) drain - source current, i ds (a) parameters: v gs = 20 v - 55 c 0 c 25 c 75 c 150 c 125 c 100 c figure 5. normalized on-resistance vs. temperature C2M0080120D rev. a
4 typical performance figure 8. typical and minimum threshold voltage vs. temperature figure 11. typical 3rd quadrant characteristics t j = 150 oc figure 9. typical 3rd quadrant characteristics t j = -55 oc 0.00 0.05 0.10 0.15 0.20 0.25 0.30 10 12 14 16 18 20 on resistance, r ds on ( ) gate - source voltage, vgs (v) parameters: i ds = 20 a - 55 c 150 c 25 c 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 - 50 - 25 0 25 50 75 100 125 150 threshold voltage, v th (v) junction temperature, t j ( c) conditions: v ds = 10 v i ds = 1 ma typical minimum - 50 - 40 - 30 - 20 - 10 0 - 5 - 4 - 3 - 2 - 1 0 drain - source current, i ds (a) drain - source voltage, v ds (v) conditions: t j = - 55 c v gs = 0 v v gs = 5 v v gs = 10 v v gs = 15 v v gs = 20 v - 50 - 40 - 30 - 20 - 10 0 - 5 - 4 - 3 - 2 - 1 0 drain - source current, i ds (a) drain - source voltage, v ds (v) conditions: t j = 25 c v gs = 0 v v gs = 5 v v gs = 10 v v gs = 15 v v gs = 20 v figure 7. on-resistance vs. gate voltage - 50 - 40 - 30 - 20 - 10 0 - 5 - 4 - 3 - 2 - 1 0 drain - source current, i ds (a) drain - source voltage, v ds (v) conditions: t j = 150 c v gs = 0 v v gs = 5 v v gs = 10 v v gs = 15 v v gs = 20 v figure 10. typical 3rd quadrant characteristics t j = 25 oc 0 10 20 30 40 50 60 0 200 400 600 800 1000 1200 stored energy, e oss (j) drain - source voltage, v ds (v) figure 12. typical transfer characteristics C2M0080120D rev. a
5 0.001 0.010 0.100 1.000 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 junctino - case thermal impedance, z thjc ( o c/w) pulse time, t p (s) 0.5 0.3 0.1 0.05 0.02 0.01 singlepulse dc: d = t p / t t p t typical performance figure 13. typical typical capacitances vs. drain-source voltage (0 - 200v) 1 10 100 1000 10000 0 50 100 150 200 capacitance (pf) drain - source voltage, v ds (v) c iss c oss c rss conditions: v gs = 0 v f test = 1 mhz 1 10 100 1000 10000 0 200 400 600 800 1000 capacitance (pf) drain - source voltage, v ds (v) c iss c oss c rss conditions v gs = 0 v f test = 1 mhz 0 50 100 150 200 250 - 50 - 25 0 25 50 75 100 125 150 dissipated power, p d (w) case temperature, t c ( c) condition: t j = 150 c 0 5 10 15 20 25 30 35 - 50 - 25 0 25 50 75 100 125 150 continuous drain - source current, i ds (a) case temperatrue, t c ( o c) figure 14. typical typical capacitances vs. drain-source voltage (0 - 1000v) 0.1 1 10 100 1 10 100 1000 drain - source current, i ds (a) drain - source voltage, v ds (v) limited by r ds(on) figure 18. safe operating area figure 17. typical transient thermal impedance (junction - case) with duty cycle figure 15. power dissipation derating curve figure 16. continuous current derating curve C2M0080120D rev. a
6 typical performance 0 4 8 12 16 20 0 10 20 30 40 50 gate - source voltage, v gs (v) gate - source charge, q gs (nc) conditions: v ds = 800 v i ds = 20 a i gs = 10 ma t j = 25 c 0 10 20 30 40 50 60 70 80 0 5 10 15 20 25 time (ns) external gate resistor ( ? ) t d(off) t d(on) t r t f conditions: v gs = 0 / 20 v v ds = 800 v r l = 40 ? i ds = 20 a t j = 25 c 0 100 200 300 400 500 0 5 10 15 20 switching energy (j) peak drain - source current, i ds (a) e off e on e tot,sw conditions: v gs = 0 / 20 v r g = 2.5 ? v ds = 800 v l = 856 h fwd = c4d10120 t j = 25 c 0 100 200 300 400 500 600 25 50 75 100 125 150 switching energy (j) junction temperature, t j ( c) e off e on e tot,sw conditions: v gs = 0 / 20 v r g = 6.8 ? v ds = 800 v l = 856 h fwd = c4d10120 i ds = 20 a figure 22. clamped inductive switching energy vs. junction temperature (fig. 24) figure 21. clamped inductive switching energy vs. drain current (fig. 24) figure 19. typical gate characteristic 25 oc figure 20. resistive switching times vs. r g C2M0080120D rev. a
7 clamped inductive switch testing fixture and waveforms figure 23. clamped inductive switching waveform test circuit c = 42.3 f v = 800 v d.u.t. C2M0080120D c4d10120d 10a, 1200v sic schottky l = 856 h figure 24. switching test waveforms for transition times v ds v v ds on t d (off) t f t off 10% 90% 90% t on t d (on) t r v gs v gs off v gs on v ds off 10% 10% 90% 10% c = 42.3 f v = 800 v C2M0080120D l = 856 h d.u.t. C2M0080120D figure 25. body diode recovery test circuit C2M0080120D rev. a
8 10% irr v cc t rr irr ic vpk tx 10% v cc qrr= trr id dt tx diode reverse recovery energy diode recovery waveforms erec= t2 id dt t1 t1 t2 test circuit diagrams and waveforms figure 26. body diode recovery waveform for official use only C not cleared for open release for official use only C not cleared for open release e a = 1/2l x i d 2 figure 27. unclamped inductive switching test circuit figure 28. unclamped inductive switching wave - form for avalanche energy esd test total devices sampled resulting classifcation esd-hbm all devices passed 1000v 2 (>2000v) esd-mm all devices passed 400v c (>400v) esd-cdm all devices passed 1000v iv (>1000v) esd ratings C2M0080120D rev. a
9 9 package dimensions package to-247-3 recommended solder pad layout to-247-3 (1) (2) (3) pos inches millimeters min max min max a .190 .205 4.83 5.21 a1 .090 .100 2.29 2.54 a2 .075 .085 1.91 2.16 b .042 .052 1.07 1.33 b1 .075 .095 1.91 2.41 b2 .075 .085 1.91 2.16 b3 .113 .133 2.87 3.38 b4 .113 .123 2.87 3.13 c .022 .027 0.55 0.68 d .819 .831 20.80 21.10 d1 .640 .695 16.25 17.65 d2 .037 .049 0.95 1.25 e .620 .635 15.75 16.13 e1 .516 .557 13.10 14.15 e2 .145 .201 3.68 5.10 e3 .039 .075 1.00 1.90 e4 .487 .529 12.38 13.43 e .214 bsc 5.44 bsc n 3 3 l .780 .800 19.81 20.32 l1 .161 .173 4.10 4.40 ?p .138 .144 3.51 3.65 q .216 .236 5.49 6.00 s .238 .248 6.04 6.30 part number package marking C2M0080120D to-247-3 c2m0080120 this product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defbrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, air traffc control systems, or weapons systems. copyright ? 2013 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks and z-rec and z-fet are trademarks of cree, inc. C2M0080120D rev. a cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 fax: +1.919.313.5451 www.cree.com/power
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